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| DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY NP160N04TDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263-7pin (MP-25ZT) typ. 1.5 g Note Pb-free (This product does not contain Pb in the external electrode). FEATURES * Super low on-state resistance RDS(on)1 = 1.6 m TYP. / 2.0 m MAX. (VGS = 10 V, ID = 80 A) RDS(on)2 = 2.2 m TYP. / 5.4 m MAX. (VGS = 4.5 V, ID = 80 A) * High Current Rating ID(DC) = 160 A * Logic level drive type (TO-263-7pin) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 20 160 640 220 1.8 175 -55 to +175 372 61 372 V V A A W W C C mJ A mJ Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Energy Note2 Note3 Note3 EAS IAR EAR Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 20 V, RG = 25 , VGS = 20 0 V, L = 100 H 3. RG = 25 , Tch(peak) 150C THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.68 83.3 C/W C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18761EJ2V0DS00 (2nd edition) Date Published July 2007 NS CP(K) Printed in Japan 2007 The mark NP160N04TDG ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 40 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = 5 V, ID = 40 A VGS = 10 V, ID = 80 A VGS = 4.5 V, ID = 80 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 80 A, VGS = 10 V, RG = 0 MIN. TYP. MAX. 1 100 UNIT A nA V S 1.5 37 2.0 94 1.6 2.2 10500 980 630 35 55 107 17 2.5 Drain to Source On-state Resistance 2.0 5.4 15750 1470 1140 80 140 220 50 270 m m pF pF pF ns ns ns ns nC nC nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD Note VDD = 32 V, VGS = 10 V, ID = 160 A IF = 160 A, VGS = 0 V IF = 160 A, VGS = 0 V, di/dt = 100 A/s 180 30 57 0.9 49 60 Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VF(S-D) trr Qrr 1.5 V ns nC Note Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V 50 TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RL VDD VGS VGS Wave Form 0 10% VGS 90% VDS 90% 90% 10% 10% BVDSS IAS ID VDD VDS VGS 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 RL VDD 2 Data Sheet D18761EJ2V0DS NP160N04TDG TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 250 dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 PT - Total Power Dissipation - W 200 150 100 50 0 0 25 50 75 100 125 150 175 TC - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - C 10000 1000 ID - Drain Current - A ID(pulse) d it e im ) )L V on S( 1i 0 R D GS = (V PW =1 i 00 100 10 1 ID(DC) DC y ar nd co Se s 1i m i s 1i 0 w Po D er m i s t io ip a i ss d it e im nL Br o ed ak wn d it e Lim TC = 25C Single Pulse 0.1 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - C/W Rth(ch-A) = 83.3C/Wi 10 1 Rth(ch-C) = 0.68C/Wi 0.1 Single Pulse 0.01 100 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 Data Sheet D18761EJ2V0DS 3 NP160N04TDG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 700 600 ID - Drain Current - A 1000 VGS = 10 V ID - Drain Current - A 100 10 1 0.1 VDS = 10 V Pulsed 500 400 300 200 100 0 0 0.5 1 1.5 2 2.5 VDS - Drain to Source Voltage - V Pulsed 4.5 V TA = -55C 25C 75C 150C 175C 0.01 1 2 3 4 5 6 VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1000 Tch = -55C 25C 75C 2.5 2 1.5 1 0.5 0 -75 -25 25 75 100 10 150C 175C 1 0.1 1 10 100 VDS = 5 V Pulsed VDS = VGS ID = 250 A 125 175 225 Tch - Channel Temperature - C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m 6 Pulsed 5 4 3 VGS = 4.5 V 2 1 0 1 10 100 1000 ID - Drain Current - A 10 V 12 10 8 6 4 2 0 0 5 10 15 20 VGS - Gate to Source Voltage - V ID = 80 A Pulsed 4 Data Sheet D18761EJ2V0DS NP160N04TDG DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 6 Ciss, Coss, Crss - Capacitance - pF 5 4 3 2 1 0 -75 ID = 80 A Pulsed VGS = 4.5 V Ciss 10000 Coss 10 V 1000 VGS = 0 V f = 1 MHz 100 0.01 0.1 1 Crss -25 25 75 125 175 225 10 100 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 1000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 35 30 25 20 15 10 5 0 VDS ID = 160 A Pulsed 100 150 0 200 VGS 3 6 VDD = 32 V 20 V 8V 12 VGS - Gate to Source Voltage - V td(off) 100 tr td(on) 10 VDD = 20 V VGS = 10 V RG = 0 1 0.1 1 10 100 1000 ID - Drain Current - A tf 9 0 50 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 VGS = 10 V 10 0V 100 10 di/dt = 100 A/s VGS = 0 V 1 0.1 1 10 100 1000 1 Pulsed 0.1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet D18761EJ2V0DS 5 NP160N04TDG PACKAGE DRAWING (Unit: mm) TO-263-7pin (MP-25ZT) EQUIVALENT CIRCUIT Drain Gate Body Diode Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D18761EJ2V0DS NP160N04TDG TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side Reel side MARKING INFORMATION NEC 160N04 DG Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The NP160N04TDG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Infrared reflow Soldering Conditions Maximum temperature (Package's surface temperature): 260C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220C: 60 seconds or less Preheating time at 160 to 180C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Recommended Condition Symbol IR60-00-3 Partial heating Maximum temperature (Pin temperature): 350C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less P350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet D18761EJ2V0DS 7 NP160N04TDG * The information in this document is current as of July, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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